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APTM50DHM65T
Asymmetrical - Bridge MOSFET Power Module
VBUS VBUS SENSE Q1 CR3
VDSS = 500V RDSon = 65mW max @ Tj = 25C ID = 51A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G1 S1 OUT1 OUT2 Q4
CR2 G4 0/VBU S SENSE S4 0/VBU S NTC2
NTC1
VBUS SENSE
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 500 51 38 204 30 65 390 51 50 3000 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM50DHM65T - Rev 2
May, 2004
APTM50DHM65T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Tj = 25C Tj = 125C
Min 500
Typ
Max 100 500 65 5 100
Unit V A mW V nA
VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A RG = 3W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 51A, RG = 3 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 51A, RG = 3 Min Typ 7000 1400 90 140 40 70 21 38 75 93 1035 845 1556 1013 J J ns Max Unit pF
nC
Diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt = 200A/s IF = 60A VR = 400V di/dt = 200A/s Min Tc = 70C Typ 60 1.6 1.9 1.4 130 170 220 920 Max 1.8 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
May, 2004 2-6 APTM50DHM65T - Rev 2
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
APTM50DHM65T
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 Min Typ Max 0.32 0.9 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e R 25
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50DHM65T - Rev 2
May, 2004
APTM50DHM65T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 0.9 0.7 0.5
Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 160 120 80 40 5.5V 0 0 VGS=10&15V ID, Drain Current (A) 8V 150 125 100 75 50 25 0 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A)
Normalized to VGS=10V @ 25.5A
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7V 6.5V 6V 5V
TJ=25C
TJ=125C
TJ=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
RDS(on) Drain to Source ON Resistance
1.1
1.05
50 40 30 20 10 0
VGS=10V
1 VGS=20V 0.95
0.9 0 10 20 30 40 50 ID, Drain Current (A) 60
25
50 75 100 125 TC, Case Temperature (C)
150
May, 2004
APT website - http://www.advancedpower.com
4-6
APTM50DHM65T - Rev 2
APTM50DHM65T
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 ID, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 25.5A
100
limited by RDSon
100 us 1 ms 10 ms
10
1
Single pulse TJ=150C 1
100 ms
0.1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC)
May, 2004
VDS=400V
ID=51A TJ=25C
VDS=100V VDS=250V
10000
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
5-6
APTM50DHM65T - Rev 2
APTM50DHM65T
Delay Times vs Current 80 70 td(on) and td(off) (ns) 60 50 40 30 20 10 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Current 3 Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Eon Switching Energy (mJ)
VDS=333V RG=3 TJ=125C L=100H VDS=333V RG=3 TJ=125C L=100H
Rise and Fall times vs Current 160 140 120 tr and tf (ns) 100 80 60 40 20 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=333V RG=3 TJ=125C L=100H
td(off)
tf
tr
td(on)
Switching Energy vs Gate Resistance 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
VDS=333V ID=51A TJ=125C L=100H
Eoff
Eon
Eoff
Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40 45
VDS=333V D=50% RG=3 TJ=125C
IDR, Reverse Drain Current (A)
400
100
TJ=150C TJ=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V)
May, 2004
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM50DHM65T - Rev 2
APT reserves the right to change, without notice, the specifications and information contained herein

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